发明名称 |
Integrated circuit with electrostatically coupled MOS transistors, and method for producing the same |
摘要 |
<p>The circuit (100) has an electrically conductive portion (117) placed between a gate (113a) of a lower MOS transistor (101a) and a channel region (109b) of an upper MOS transistor (101b). A dielectric layer (103) is placed between the conductive portion and the channel region. A section of the channel region is located in a plane parallel to main surfaces (106b, 108b) of a semi-conductor layer (104b) and included in a section of the conductive portion. The channel region of the upper transistor is placed between the conductive portion and a gate (113b) of the upper transistor. An independent claim is also included for a method for forming an integrated circuit.</p> |
申请公布号 |
EP2293327(A1) |
申请公布日期 |
2011.03.09 |
申请号 |
EP20100174497 |
申请日期 |
2010.08.30 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES |
发明人 |
AUGENDRE, EMMANUEL;VINET, MAUD;CLAVELIER, LAURENT;BATUDE, PERRINE |
分类号 |
H01L21/822;H01L21/8234;H01L21/8238;H01L27/06;H01L29/49 |
主分类号 |
H01L21/822 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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