发明名称 ISOTOPICALLY PURE SILICON-ON-INSULATOR WAFERS AND METHOD OF MAKING SAME
摘要 A semiconductor wafer structure having a device layer, an insulating layer, and a substrate which is capable of supporting increased semiconductor device densities or increased semiconductor device power. One or more of the layers includes an isotopically enriched semiconductor material having a higher thermal conductivity than semiconductor material having naturally occurring isotopic ratios. The wafer structure may be formed by various techniques, such as wafer bonding, and deposition techniques.
申请公布号 EP1706903(A4) 申请公布日期 2011.03.09
申请号 EP20040811841 申请日期 2004.11.22
申请人 ISONICS CORPORATION 发明人 BURDEN, STEPHEN, J.
分类号 H01L27/01;C30B19/00;C30B23/02;C30B25/02;H01L21/02;H01L21/20;H01L21/762;H01L29/16;H01L29/20;H01L33/64 主分类号 H01L27/01
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