| 摘要 |
Producing a solid-state imaging device by (1) forming a structure including (a) a substrate having a first impurity with a first concentration, (b) a first conductive type Si layer and (c) a first conductive type impurity layer stacked on one another in that order, the first conductive type Si layer being formed on the substrate, the first conductive type impurity layer being formed in a boundary region including a boundary of the substrate and the Si layer, and a part of the substrate facing the boundary and a part of the first conductive type Si layer facing the boundary having a second impurity; and (2) forming in the Si layer a second conductive type region capable of storing in the Si layer a charge generated by a photoelectric conversion; and forming an interconnection layer on the Si layer.
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