| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device which is highly reliable by improving bonding strength over the entire interface of a bump, an under barrier metal, etc., and a semiconductor apparatus using the same. <P>SOLUTION: The semiconductor device includes an electrode pad 4 formed on a substrate 5, a first protective film 3 formed on the substrate 5 and electrode pad 4 and having a first opening for exposing the electrode pad 4, the under barrier metal 2 formed on the electrode pad 4 so as to cover a peripheral edge of the first opening of the first protective film 3, and the bump 6 formed on the under barrier metal 2. Here, an angle of contact between the under barrier metal 2 and the first protective film 3 at the peripheral edge of the under barrier metal 2 is≤90°, and an angle of contact between the bump 6 and under barrier metal 2 at the peripheral edge of the bump 6 is≤90°. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
