发明名称 |
LATTICE MATCHED CRYSTALLINE SUBSTRATES FOR CUBIC NITRIDE SEMICONDUCTOR GR |
摘要 |
Disclosed embodiments include methods of fabricating a semiconductor layer or device and devices fabricated thereby. The methods include, but are not limited to, providing a substrate having a cubic crystalline surface with a known lattice parameter and growing a cubic crystalline group III-nitride alloy layer on the cubic crystalline substrate by coincident site lattice matched epitaxy. The cubic crystalline group III-nitride alloy may be prepared to have a lattice parameter (a′) that is related to the lattice parameter of the substrate (a). The group III-nitride alloy may be a cubic crystalline InxGayAl1-x-yN alloy. The lattice parameter of the InxGayAl1-x-yN or other group III-nitride alloy may be related to the substrate lattice parameter by (a′)=√2(a) or (a′)=(a)/√2. The semiconductor alloy may be prepared to have a selected band gap.
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申请公布号 |
US2011049520(A1) |
申请公布日期 |
2011.03.03 |
申请号 |
US20090551430 |
申请日期 |
2009.08.31 |
申请人 |
ALLIANCE FOR SUSTAINABLE ENERGY, LLC |
发明人 |
NORMAN ANDREW G.;PTAK AARON;MCMAHON WILLIAM E. |
分类号 |
H01L29/04;H01L21/20 |
主分类号 |
H01L29/04 |
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