| 摘要 |
<p>Provided is a semiconductor wafer having decreased interface state density at the semiconductor-insulator interface, a method of manufacturing this semiconductor wafer, and a semiconductor device. Provided is a semiconductor wafer comprising a group 3-5 compound semiconductor layer containing arsenic; and an insulating layer that is an oxide, a nitride, or an oxynitride, wherein arsenic oxides are not detected between the semiconductor layer and the insulating layer. This semiconductor wafer may be such that, when using X-ray photoelectron spectroscopy to observe photoelectron intensity of an element existing between the semiconductor layer and the insulating layer, an oxide peak caused by oxidized arsenic is not detected on a higher bonding energy side of an element peak caused by the arsenic.</p> |
