发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To measure a leakage current when a transistor in a ROM decoder 3 is turned off. SOLUTION: A semiconductor integrated circuit device includes: a ladder resistor 1, the ROM decoder 3; and a test circuit 5. The ladder resist 1 has series-connected resistors RP1-RP4. correction voltages are supplied to both ends of the series connection or at least one of a plurality of connection points, and gradation voltages are generated individually for the plurality of connection points. The ROM decoder 3 selects one of the plurality of gradation voltages generated by the ladder resistor 1, on the basis of a supplied data signal. The test circuit 5 measures the leakage current of the ROM decoder 3. The test circuit 5 includes cutting-off parts SW_1-SW_4, and a controller 10. When a leakage current is measured, the cutting-off parts SW_1-SW_4 can cut off, at a predetermined spot, the series connection both ends of which are supplied with different power supply voltages. The controller 10 controls cut off at each of the cutting-off parts SW_1-SW_4. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011038849(A) 申请公布日期 2011.02.24
申请号 JP20090185028 申请日期 2009.08.07
申请人 RENESAS ELECTRONICS CORP 发明人 TOKUNO HIDEYUKI
分类号 G01R31/28;G09G3/20;G09G3/36;H01L21/822;H01L27/04 主分类号 G01R31/28
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