| 摘要 |
PROBLEM TO BE SOLVED: To suppress formation of silicon crystal on a liner for protecting an inner wall of a chamber. SOLUTION: A film deposition apparatus 50 includes a process gas supply unit 4 provided on a top of a chamber 1, a turnable susceptor 7 with a semi-conductor substrate 6 being placed therein, a gas flow regulating plate 20 provided between the supply unit 4 and the susceptor 7 on the inner side, and a cylindrical liner 2 for covering an inner wall of the chamber, and forms a crystal film on a surface of a semi-conductor substrate 6 on the lower susceptor 7 by allowing the process gas to flow down in the chamber 1 from the supply unit 4 via the gas flow regulating plate 20. The liner 2 has a constricted part 33 having the inside diameter smaller than that of a head part 31 and a barrel part 32 between the head part 31 and the barrel part 32 on the gas flow regulating plate 20 side. In addition, a heat transfer ring 40 is arranged on the constricted part 33 of the liner 2 so as to surround the periphery of the constricted part 33, and the heat of the liner 2 is transferred to the chamber 1 via the heat transfer ring 40. COPYRIGHT: (C)2011,JPO&INPIT
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