Methods of Etching Nanodots, Methods of Removing Nanodots From Substrates, Methods of Fabricating Integrated Circuit Devices, Methods of Etching a Layer Comprising a Late Transition Metal, and Methods of Removing a Layer Comprising a Late Transition Metal From a Substrate

摘要

Embodiments of the invention include methods of etching nanodots, to methods of removing nanodots from substrates, and to methods of fabricating integrated circuit devices. In one embodiment, a method of etching nanodots that include a late transition metal includes exposing such nanodots to a gas comprising a phosphorus and halogen-containing compound and an oxidizing agent. After the exposing, the nanodots which are remaining and were exposed are etched (either partially or completely) with an aqueous solution comprising HF.