ELECTRO-DEPOSITION FIXED ABRASIVE GRAIN WIRE AND CRYSTAL SLICING METHOD USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a method for reducing processing damage in slicing semiconductor crystals such as hard-brittle Ga-containing nitride crystal.

SOLUTION: First, a metal seat (400) to which a carbon seat (200) attached with a GaN crystal (100) and a grinding wheel (20) for truing is fixed is set in a cutting device for slicing crystals by a multi-wire saw (1). Next, an oscillation angle of the plate-shaped GaN crystal (100) during a cutting process is determined by oscillating a wire (10). The wire (10) is repeatedly oscillated so that the wire (10) travels toward a center from an end of the GaN crystal (100), and the cutting process proceeds by lifting the metal seat (400) using a lifting motor.

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