发明名称 |
Forming floating body RAM using bulk silicon substrate |
摘要 |
A method for forming a semiconductor device is provided. The method comprises providing a semiconductor structure comprising a semiconductor substrate and a dielectric layer on the semiconductor substrate, wherein the dielectric layer has an opening through which the semiconductor substrate is exposed; forming a semiconductor strip on the dielectric layer and adjacent the opening, wherein the semiconductor strip is electrically isolated from the semiconductor substrate; forming a gate dielectric over a portion of the semiconductor strip that is over the dielectric layer; forming a gate electrode over the gate dielectric; and forming a source/drain region in the semiconductor strip.
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申请公布号 |
US7888191(B2) |
申请公布日期 |
2011.02.15 |
申请号 |
US20090638768 |
申请日期 |
2009.12.15 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
FUNG KA-HING;DIAZ CARLOS H. |
分类号 |
H01L21/84 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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