发明名称 |
Ion implantation apparatus |
摘要 |
An ion implantation apparatus is provided with first and second magnets arranged so as to face each other in a Y direction across a path for a ribbon-shaped ion beam. The first and second magnets cross a traveling direction of the ribbon-shaped ion beam. Each of the first and second magnets has a pair of magnetic poles on an inlet side and on an outlet side of the ion beam. The polarities thereof are opposite between the first magnet and the second magnet.
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申请公布号 |
US7888652(B2) |
申请公布日期 |
2011.02.15 |
申请号 |
US20070945831 |
申请日期 |
2007.11.27 |
申请人 |
NISSIN ION EQUIPMENT CO., LTD. |
发明人 |
FUJITA HIDEKI |
分类号 |
H01J1/50;G21K5/10;H01J37/08 |
主分类号 |
H01J1/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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