发明名称 Ion implantation apparatus
摘要 An ion implantation apparatus is provided with first and second magnets arranged so as to face each other in a Y direction across a path for a ribbon-shaped ion beam. The first and second magnets cross a traveling direction of the ribbon-shaped ion beam. Each of the first and second magnets has a pair of magnetic poles on an inlet side and on an outlet side of the ion beam. The polarities thereof are opposite between the first magnet and the second magnet.
申请公布号 US7888652(B2) 申请公布日期 2011.02.15
申请号 US20070945831 申请日期 2007.11.27
申请人 NISSIN ION EQUIPMENT CO., LTD. 发明人 FUJITA HIDEKI
分类号 H01J1/50;G21K5/10;H01J37/08 主分类号 H01J1/50
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