发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND RADIO FREQUENCY MODULE
摘要 The present invention provides a semiconductor integrated circuit device and a radio frequency module realizing reduction in high-order harmonic distortion or IMD. For example, a so-called antenna switch having a plurality of transistors between an antenna terminal and a plurality of signal terminals is provided with a voltage supply circuit. The voltage supply circuit is a circuit for supplying voltage from a voltage supply terminal to at least two signal terminals in the plurality of signal terminals via resistive elements. With the configuration, antenna voltage dropped due to a leakage or the like can be boosted and, for example, transistors in an off state can be set to a deep off state.
申请公布号 US2011034137(A1) 申请公布日期 2011.02.10
申请号 US20100910071 申请日期 2010.10.22
申请人 RENESAS ELECTRONICS CORPORATION 发明人 NAKAJIMA AKISHIGE;SHIGENO YASUSHI;OGAWA TAKASHI;TAKATANI SHINNICHIROU;OSAKABE SHINYA;ISHIKAWA TOMOYUKI
分类号 H01Q11/12 主分类号 H01Q11/12
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