| 摘要 |
PROBLEM TO BE SOLVED: To provide a resistance variable nonvolatile memory element that is enhanced in integration and reducible in power consumption. SOLUTION: A memory element 10 has at least an electrode 2a and an electrode 2b arranged on a substrate 1, and has a nanowire structure 3, having a shell layer of a p-type semiconductor formed on an inorganic oxide nanowire of MgO etc., formed between the electrode 2a and electrode 2b. Thus, the shell layer of the p-type oxide semiconductor is formed on the inorganic oxide, accordingly a surface of the manufactured nanowire structure 3 is hard to be oxidized. The inorganic oxide forming the shell layer of the p-type semiconductor is NiO, CoO, CuO, Ta2O5, HfO2, etc. COPYRIGHT: (C)2011,JPO&INPIT
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