发明名称 |
SOLID-STATE IMAGE PICKUP ELEMENT, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS USING THE SAME |
摘要 |
Disclosed herein is a solid-state image pickup element, including: a semiconductor substrate; a pixel portion which is formed on the semiconductor substrate and in which a plurality of pixels each having a photoelectric conversion portion are arranged; an insulating layer formed on the semiconductor substrate so as to cover the photoelectric conversion portion; a hole portion formed in the insulating layer and above the photoelectric conversion portion; a silicon nitride layer formed so as to cover a bottom surface and a side surface of the hole portion; and a buried layer formed on the silicon nitride layer, wherein the silicon nitride layer is formed so as to contain a silicon nitride formed by utilizing an atomic layer deposition method.
|
申请公布号 |
US2011024857(A1) |
申请公布日期 |
2011.02.03 |
申请号 |
US20100788503 |
申请日期 |
2010.05.27 |
申请人 |
SONY CORPORATION |
发明人 |
TOUMIYA YOSHINORI;TABUCHI KIYOTAKA;SHIGA YASUYUKI;SUGIURA IWAO;MIYASHITA NAOYUKI;IWASAKI MASANORI;KOKUBUN KATSUNORI;YAMAZAKI TOMOHIRO |
分类号 |
H01L31/0232;H01L27/14;H01L27/146;H01L31/18;H04N5/335;H04N5/369;H04N5/374 |
主分类号 |
H01L31/0232 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|