发明名称 ELECTRODE STRUCTURE ADAPTED FOR HIGH APPLIED VOLTAGE AND FABRICATION METHOD THEREOF
摘要 An electrode structure adapted for high applied voltage is provided, which comprises a conductive plate substrate and a covering layer disposed thereon such that a covering percentage of the covering layer over the conductive plate substrate is more than 50%. Since area of the conductive plate substrate covered by the covering layer is larger than the area exposed, the possibility of arcing is reduced and the voltage applied to the electrode structure may be increased.
申请公布号 US2011027615(A1) 申请公布日期 2011.02.03
申请号 US20090511711 申请日期 2009.07.29
申请人 发明人 HSU CHEN;HU CHIH-MING;LIN CHUN-YEN;LIN WEN-SHENG;JANG SHIH-CHIEH
分类号 B32B18/00;B05D5/12 主分类号 B32B18/00
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