| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide CMP (Chemical Mechanical Polishing) polishing liquid capable of rapidly polishing a metal containing copper with excellent flatness. <P>SOLUTION: The CMP polishing liquid for polishing a metal containing copper includes abrasive grains 10, oxide metal dissolving agent, oxidizing agent, corrosion-resistant agent, water-soluble polymer and water. The pH value of the CMP polishing liquid is≤7. The abrasive grains is subjected to anion processing. The mean primary particle diameter of the abrasive grains is 10-80 nm. The mean secondary particle diameter of the abrasive grains is 25-250 nm. The degree of association obtained by dividing the mean secondary particle diameter by the mean primary particle diameter is≥2.3. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
