| 摘要 |
A semiconductor device including: multiple layer wirings which are formed above a semiconductor substrate; multiple first electrode type contact plugs which have a granular shape in plane view, extend in a lower direction from the layer wirings to be connected to the layer wirings on an upper side, and serve as a first electrode; multiple second electrode type contact plugs which have a granular shape in plane view, extend in the lower direction from the layer wirings to be connected to the layer wirings on an upper side, and serve as a second electrode different from the first electrode; and a capacitative element section that fauns a capacity between adjacent ones of the first electrode type contact plugs and second electrode type contact plugs. The layer wirings serving as emergence portions of capacity electrodes of the first and second electrode type contact plugs are formed by different layer wirings.
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