| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device equipped with a plurality of diffusion layer resistances each of which has a different resistance value, while reducing the manufacturing steps and manufacturing cost, and to provide a method for manufacturing the semiconductor device.SOLUTION: A protective film 41 is formed by oxidizing or nitriding the surface side of a semiconductor substrate, and a plurality of extended diffusion layer regions 21, 22 and 23, each of which contains conductive impurity are formed under the protective film. Then, a photoresist film is formed on at least one of the plurality of diffusion layer regions; and while a ground potential is supplied to the back side of the semiconductor substrate, plasma ashing processing is applied to the photoresist film so that the photoresist film can be removed. Finally, a wiring layer 60 electrically connected to each diffusion layer region is formed via an insulating layer 40 so that each diffusion layer region can be turned to be a diffusion layer resistor. |
