发明名称 |
DIELECTRIC THIN FILM ELEMENT AND PROCESS FOR PRODUCTION THEREOF |
摘要 |
Disclosed is a dielectric thin film element which has high moisture resistance and rarely undergoes the deterioration in properties thereof. Specifically disclosed is a dielectric thin film element (10) which comprises: a substrate (11); an adhesive layer (13) that is formed on one main surface of the substrate (11); a capacitance unit (20) that comprises a lower electrode layer (21) formed on the adhesive layer (13), a dielectric layer (22) formed on the lower electrode layer (21) and an upper electrode layer (23) formed on the dielectric layer (22); and a protective layer (30) that is so formed as to cover the capacitance unit (20). The dielectric thin film element (10) is characterized in that a rim part of the adhesive layer (13) is exposed from the protective layer (30). |
申请公布号 |
WO2011010638(A1) |
申请公布日期 |
2011.01.27 |
申请号 |
WO2010JP62176 |
申请日期 |
2010.07.20 |
申请人 |
MURATA MANUFACTURING CO., LTD.;NAKAISO TOSHIYUKI |
发明人 |
NAKAISO TOSHIYUKI |
分类号 |
H01G4/12;H01G4/33 |
主分类号 |
H01G4/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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