发明名称 DIELECTRIC THIN FILM ELEMENT AND PROCESS FOR PRODUCTION THEREOF
摘要 Disclosed is a dielectric thin film element which has high moisture resistance and rarely undergoes the deterioration in properties thereof. Specifically disclosed is a dielectric thin film element (10) which comprises: a substrate (11); an adhesive layer (13) that is formed on one main surface of the substrate (11); a capacitance unit (20) that comprises a lower electrode layer (21) formed on the adhesive layer (13), a dielectric layer (22) formed on the lower electrode layer (21) and an upper electrode layer (23) formed on the dielectric layer (22); and a protective layer (30) that is so formed as to cover the capacitance unit (20). The dielectric thin film element (10) is characterized in that a rim part of the adhesive layer (13) is exposed from the protective layer (30).
申请公布号 WO2011010638(A1) 申请公布日期 2011.01.27
申请号 WO2010JP62176 申请日期 2010.07.20
申请人 MURATA MANUFACTURING CO., LTD.;NAKAISO TOSHIYUKI 发明人 NAKAISO TOSHIYUKI
分类号 H01G4/12;H01G4/33 主分类号 H01G4/12
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