| 摘要 |
<p>Wafers A1 to A10 of a first lot A and wafers B1 to B10 of a second lot B are processed by a second heating unit at different temperatures, respectively. A wafer W is carried in a processing block included in coating and developing system along a route passing a temperature control unit CPL2, a coating unit BCT, a heating unit LHP2, a temperature control unit CPL3, a coating unit COT, a heating unit LHP3, and a cooling unit COL in that order. The process temperature of the heating unit LHP3 is changed after the last wafer A10 of the first lot A has been processed by the heating unit LHP3. The wafers of the second lot B are carried according to a carrying schedule such that carrying cycles succeeding a carrying cycle in which the first substrate B1 of the second lot B is carried to the second temperature conditioning unit CPL3 carry the substrates B of the second lot B succeeding the first substrate B1 and processed by a heating process by the heating unit LHP2 in due order to a buffer unit BF2, and the wafers B held in the buffer unit BF2 are carried in due order to the downstream modules after the process temperature of the heating unit LHP3 has been changed.</p> |
