发明名称 METHOD OF MANUFACTURING FUNCTIONAL DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING FUNCTIONAL DEVICE MANUFACTURED BY THE METHOD
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing a functional device which is superior in mass production and has improved performance without damaging the functional device in the manufacturing, and to provide a method of manufacturing the semiconductor device using the method of manufacturing the functional device.SOLUTION: There is provided the method of manufacturing the functional device 10 in which a hollow 5 spatially separating a part of a functional thin film 2 formed on one surface of a silicon substrate (substrate) 1 is formed in the silicon substrate 1. In the method, when forming the functional device 10 on one surface of a silicon wafer (wafer) 3 becoming a base and separating the functional device 10, an organic substance present on the one surface of the silicon wafer 3 is removed, a temporary fixing sheet 6 is stuck on the one surface of the silicon wafer 3, and a dicing sheet 7 is stuck on the other surface, the silicon wafer 3 is cut from the side of the temporary fixing sheet 6 together with the temporary fixing sheet 6. Then, the temporary fixing sheet 6 is peeled from the functional device 10 and then organic substances present on surfaces of the functional devices 10 are removed.
申请公布号 JP2011014652(A) 申请公布日期 2011.01.20
申请号 JP20090156107 申请日期 2009.06.30
申请人 PANASONIC ELECTRIC WORKS CO LTD 发明人 TSUJI KOJI
分类号 H01L21/301;B81C99/00;H01L23/02 主分类号 H01L21/301
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