| 摘要 |
A phase change memory (PCM) is provided which includes a substrate, a plurality of bottom electrodes, a plurality of top electrodes, a plurality of phase change materials, and a plurality of thermal disturbance-preventing parts. The bottom electrodes are disposed in the substrate, and the top electrodes are disposed on the substrate. The phase change (PC) materials are disposed between the top and bottom electrodes, and each of the PC materials is conducted with one of the top electrodes and one of the bottom electrodes. The thermal disturbance-preventing parts are utilized to reduce the effect of thermal disturbance upon the PCM.
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