发明名称 LOW TEMPERATURE CURABLE POLYIMIDE INSULATOR MADE FROM POLYAMIC ACID RESIN COMPOSITION HAVING HIGH PACKING STRUCTURE, AND ALL-ORGANIC THIN FILM TRANSISTOR DEVICE HAVING LOW HYSTERESIS PROPERTIES RENDERED BY THE COMPOSITION
摘要 <p>The present invention relates to a polyimide insulator film made from a low temperature curable polyamic resin composition and an all-organic thin film transistor using the same. More specifically, the present invention relates to an all-organic thin film transistor device, wherein an aromatic tetracarboxylic dianhydride having a high packing structure and an aromatic diamine monomer are polymerized to prepare a polyamic acid resin, and the resulting resin is then subjected to imidization in the presence of a low temperature curable organic catalyst having a low boiling point that is contained as an essential composition, such that a low temperature imidization is possible at a temperature range of 100 to 200°C and the catalyst residue after a thin film process is very low such as 200 ppm or less, rendering excellent transistor properties to the all-organic thin film transistor device.</p>
申请公布号 WO2011004938(A1) 申请公布日期 2011.01.13
申请号 WO2009KR05694 申请日期 2009.10.06
申请人 KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY;YI, MI HYE;AHN, TAEK;CHOI, YOO JEONG;JUNG, HYUN MIN 发明人 YI, MI HYE;AHN, TAEK;CHOI, YOO JEONG;JUNG, HYUN MIN
分类号 C08G73/10 主分类号 C08G73/10
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