METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE

摘要

Disclosed is a method for manufacturing a nitride semiconductor substrate, which is capable of suppressing polycrystalline growth and efficiently manufacturing the nitride semiconductor substrate having a nonpolar plane as a main surface. Specifically disclosed is a method for manufacturing a GaN substrate that is a nitride semiconductor substrate, the method being provided with a step (S10, S20) for preparing a base substrate produced from GaN and having a main surface with an off angle of 4.1°-47.8° with respect to the [1-100] plane, a step (S40) for epitaxially growing a semiconductor layer produced from GaN on the main surface of the base substrate, and a step (S50) for obtaining the GaN substrate having the m plane as a main surface from the semiconductor layer.