| 摘要 |
PURPOSE: An element isolation layer and a semiconductor device forming method thereof are provided to prevent a porous SOG layer from being formed in the lower part of an element isolation layer by gap-filling a SOG material in the upper part of the element isolation layer. CONSTITUTION: A first trench(200) is formed inside a substrate. A second trench(300), which is connected to the first trench, is formed in the lower part of the first trench. A sidewall insulating layer(140) is formed in the inner wall of the first trench and the second trench. A liner insulating layer(150), which buries the second trench, is formed on the second trench. A gap-fill insulating layer(160), which fills the first trench, is formed on the liner insulating layer.
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