| 摘要 |
<p>PURPOSE: A semiconductor device manufacturing method is provided to prevent the plasma damage of a gate insulation layer on the top corner of a trench by forming a protective pattern for protecting the top corner of the trench top in advance between a first dry etching and a second dry etching. CONSTITUTION: A trench is formed by etching a semiconductor substrate(21) with a hard mask film(23) as an etching barrier. A gate insulating layer(25) is formed on the trench surface. A gate conductive film fills the trench and is formed on the gate insulating layer. The gate conductive film is planarized so that the surface of the hard mask film is exposed.</p> |
