| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is excellent in soft error resistance and includes a fine structure.SOLUTION: The present invention includes a memory cell region Cell including a plurality of transistors and a core region Core arranged adjacent to the memory cell region Cell. The memory cell region Cell and the core region Core are provided with a substrate 1, a p-type well region 2 and an n-type well region 3, both of which are formed on the substrate 1. Moreover, the memory cell region Cell includes the substrate 1 and a p-type deep well region 5a that is formed under the p-type well region 2 and the n-type well region 3. The p-type deep well region 5a is adjacent to at least the p-type well region 2. |
