| 摘要 |
A QFN package and method of making same is provided comprising a substrate having a metal line extending from a connection element on a perimeter region of the substrate to a high current contact pad on interior region of the substrate. A semiconductor chip having an active surface generally faces the interior region of the substrate, wherein a heat-dissipating patterned metal distribution layer is formed over the active surface and electrically connected to an active component thereon. A solder strip electrically and thermally connects the high current contact pad and the metal distribution layer, and a mold compound generally encapsulates the semiconductor chip. The solder strip is generally uniform in depth and surface area, wherein low electrical resistance and inductance is provided between the high current contact pad and the metal distribution layer. An integrated heat sink may be further formed or placed on a passive surface of the chip.
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