| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing semiconductor device which can prevent variation of a value (K) of a low dielectric constant insulating film. SOLUTION: In the manufacture of the semiconductor device, a first low dielectric constant insulating film 2 is formed on a semiconductor substrate 1, and a photoresist pattern 4 is formed on the first low dielectric constant insulating film. The first low dielectric constant insulating film is etched by using the photoresist pattern, and a recess 5 is formed in the first low dielectric constant insulating film. A conductive film 8 is buried in the recess 5 after eliminating the photoresist pattern 4. A deteriorated layer 6, which is formed on the side wall of the recess 5 of the first low dielectric constant insulating film 2 when eliminating the photoresist pattern, is eliminated after burying the conductive film. A second low dielectric constant insulating film 10 is formed so that a side wall spacer 9 of the recess, which is generated in eliminating the deteriorated layer 6, is buried. COPYRIGHT: (C)2004,JPO
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