| 摘要 |
<p>PURPOSE: A method for forming the contact of a semiconductor device is provided to improve the yield of the semiconductor device by protecting an active region with respect to a misalignment phenomenon and a nitride film punch-through phenomenon while a contact etching process is implemented. CONSTITUTION: An active region(100) and a shallow trench isolation(STI) region(200) are formed on a semiconductor substrate. A first nitride film(310) is formed in the active region and the STI region. The first nitride film on the active region is patterned. A second nitride film is deposited in the STI region as an etch-preventive film. An interlayer insulating film is deposited in the STI region.</p> |
