| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent a contact-not-open phenomenon in a cell region by forming a cell spacer nitride film in the cell region. CONSTITUTION: A peripheral gate(G2) is formed on the peripheral region of a substrate(10) including a cell region and a peripheral region. A cell gate(G1) is formed in the cell region. The density of the cell gate is higher than that of the peripheral gate. An insulating film(18) is formed on the cell region and the peripheral region. A first cell spacer nitride film(19) is formed on the cell region and the peripheral region. The first cell spacer nitride film and the insulating film in the cell region are eliminated. A second cell spacer nitride film(20) is formed in the cell region and the peripheral region.
|
