| 摘要 |
<p>PURPOSE: A semiconductor device and a method of fabricating the same are provided to secure a process margin by forming a contact plug in wet etching to reduce the aspect ratio of a self aligned contact. CONSTITUTION: A semiconductor substrate(10) includes an active area and an element isolation film defining an active area. The conductive pattern(20) is formed on the semiconductor substrate. An insulating film is formed on the semiconductor substrate and is vertical to the conductive pattern. A barrier metal layer is formed on a polysilicon layer.</p> |
