| 摘要 |
There are provided a group III nitride semiconductor light emitting device which is constituted of a substrate, an intermediate layer formed thereon having a favorable level of orientation properties, and a group III nitride semiconductor formed thereon having a favorable level of crystallinity, and having excellent levels of light emitting properties and productivity; a production method thereof; and a lamp, the group III nitride semiconductor light emitting device configured so that at least an intermediate layer 12 composed of a group III nitride compound is laminated on a substrate 11, and an n-type semiconductor layer 14 having a base layer 14a, a light emitting layer 15 and a p-type semiconductor layer 16 are sequentially laminated on the intermediate layer 12, wherein when components are separated, based on a peak separation technique using an X-ray rocking curve of the intermediate layer 12, into a broad component having the full width at half maximum of 720 arcsec or more and a narrow component, a non-orientating component that corresponds to the broad component is included in a crystal organization of the intermediate layer 12, and a proportion of the non-orientating component within the crystal organization of the intermediate layer 12 is 30% or less in terms of an area ratio of the intermediate layer 12.
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