SEMICONDUCTOR DEVICE AND METHOD OF DETERMINING BREAKDOWN VOLTAGE

摘要

PROBLEM TO BE SOLVED: To increase ESD resistance and surge resistance by a smaller chip area without using a complicated separation structure in a lateral MOSFET to be used for an integrated intelligent switch device, a double integration type input signal and transmission IC, an integrated power IC, and so on. SOLUTION: In a semiconductor device including transistors and diodes formed on the same substrate and connected in parallel with each other, resistance in breakdown operation of the diodes is set smaller than resistance in breakdown operation of the transistors, and a secondary breakdown current of the diodes is set larger than that of the transistors. COPYRIGHT: (C)2011,JPO&INPIT