| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of sufficiently improving self-supported stability of a lower electrode constituting a capacitor. SOLUTION: This semiconductor device includes tubular lower electrodes 10 each constituting a capacitor on a capacitor base layer 2, fins 17 each formed on an outer wall part of the lower electrode 10 extending from the outer wall part, and support films 6. Each fin 17 is formed only on a part of the lower electrode 10 in the longitudinal direction. The upper end of the lower electrode 10 including the fin 17 is connected to the support film 6, and separation of the lower electrode 10 from the support film 6 is prevented. A capacitance film, an upper electrode, an embedding support film of a capacitance plate, and the capacitance plate are formed on the lower electrode 10 including the fin 17. By connecting the fin 17 to the support film 6, the connection area between the support film 6 and the lower electrode 10 can be increased. COPYRIGHT: (C)2011,JPO&INPIT
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