发明名称 |
System for directly measuring the depth of a high aspect ratio etched feature on a wafer |
摘要 |
A system (10) for directly measuring the depth of a high aspect ratio etched feature on a wafer (80) that includes an etched surface (82) and a non-etched surface (84). The system (10) utilizes an infrared reflectometer (12) that in a preferred embodiment includes a swept laser (14), a fiber circulator (16), a photodetector (22) and a combination collimator (18) and an objective lens (20). From the objective lens (20) a focused incident light (23) is produced that is applied to the non-etched surface (84) of the wafer (80). From the wafer (80) is produced a reflected light (25) that is processed through the reflectometer (12) and applied to an ADC (24) where a corresponding digital data signal (29) is produced. The digital data signal (29) is applied to a computer (30) that, in combination with software (32), measures the depth of the etched feature that is then viewed on a display (34).
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申请公布号 |
US2010321671(A1) |
申请公布日期 |
2010.12.23 |
申请号 |
US20090456781 |
申请日期 |
2009.06.23 |
申请人 |
MARX DAVID S;GRANT DAVID L |
发明人 |
MARX DAVID S.;GRANT DAVID L. |
分类号 |
G01B11/22;G01B11/00;G01B11/02;G01J3/00;G06F15/00 |
主分类号 |
G01B11/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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