发明名称 Photomask having a test pattern that includes separate features for different printed critical dimensions to correlate magnitude and direction of defocus
摘要 A photomask having a test pattern is provided for detecting focus variation in a lithographic process. A photomask having a test pattern is adapted to print test features with critical dimensions that can be measured and analyzed to determine magnitude and direction of defocus from a best focus position of an exposure tool during the lithographic process.
申请公布号 US7855037(B2) 申请公布日期 2010.12.21
申请号 US20090629115 申请日期 2009.12.02
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM HO-CHUL
分类号 G03F1/06;G03F1/14 主分类号 G03F1/06
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