| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which suppresses degradation of mechanical strength of a multilayer wiring structure while reducing capacity between lines in the multilayer wiring structure. SOLUTION: The semiconductor device includes a semiconductor substrate and the multilayer wiring structure arranged on the semiconductor substrate. The multilayer wiring structure includes a first conductive line, an insulation film for covering the first conductive line, and a second conductive line arranged on the insulation film so as to intersect with the first conductive line when seen through from an orthogonal direction to a surface of the semiconductor substrate. The insulation film includes a gap in a region where the first conductive line and second conductive line intersect with each other. A width of the gap in a direction along the second conductive line is equal to or smaller than that of the first conductive line. COPYRIGHT: (C)2011,JPO&INPIT |
