METHOD FOR PRODUCING SOI SUBSTRATE

摘要

Provided is a method of easily producing a SOI substrate that is a transparent insulating substrate on one of the major surfaces of which a silicon thin film is formed while the major surface opposite to the surface on which the silicon thin film is formed is roughened. The method produces a SOI substrate that includes at least the transparent insulating substrate, and the silicon thin film formed on a first major surface which is one of the major surfaces of the transparent insulating substrate with a second major surface, the major surface opposite to the first major surface of the transparent insulating substrate, roughened. The method for producing the SOI substrate includes at least a process of preparing the transparent insulating substrate the surface roughness of the first major surface of which is less than 0.7 nm in RMS while the surface roughness of the second major surface is larger in RMS than the surface roughness of the first major surface, and a process of forming the silicon thin film on the first major surface of the transparent insulating substrate.