发明名称 |
Mechanical enhancer additives for low dielectric films |
摘要 |
<p>A chemical vapor deposition process for preparing a low dielectric constant organosilicate (OSG) having enhanced mechanical properties by adjusting the amount of organic groups, such as methyl groups, within the mixture is disclosed herein. In one embodiment of the present invention, the OSG film is deposited from a mixture comprising a first silicon-containing precursor that comprises from 3 to 4 Si-O bonds per Si atom, from 0 to 1 of bonds selected from the group consisting of Si-H, Si-Br, and Si-Cl bonds per Si atom and no Si-C bonds and a second silicon-containing precursor that comprises at least one Si-C bond per Si atom. In another embodiment of the present invention, the OSG film is deposited from a mixture comprising an asymmetric silicon-containing precursor. In either embodiment, the mixture may further contain a porogen precursor to provide a porous OSG film.</p> |
申请公布号 |
EP2261390(A2) |
申请公布日期 |
2010.12.15 |
申请号 |
EP20100183364 |
申请日期 |
2004.05.25 |
申请人 |
AIR PRODUCTS AND CHEMICALS, INC. |
发明人 |
VINCENT, JEAN LOUISE;O'NEILL, MARK LEONARD;VRTIS, RAYMOND NICHOLAS;LUKAS, AARON SCOTT;PETERSON, BRIAN KEITH;BITNER, MARK DANIEL |
分类号 |
C07F7/04;C23C16/40;C03C3/04;C03C11/00;C07F7/18;C08G77/02;C08G77/06;C08J5/18;C23C16/42;H01L21/312;H01L21/316 |
主分类号 |
C07F7/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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