LED having vertical structure and method for fabricating the same

摘要

A light-emitting device, comprising:
a conductive support layer (156);
a first-type electrode (150) on the conductive support layer (156);
a semiconductor structure comprising a first-type GaN-based layer (128) on the first-type electrode, an active layer (126) on the first-type GaN-based layer, and a second-type GaN-based layer (124) on the active layer, wherein the first-type electrode is arranged between the conductive support layer and the semiconductor structure;
a second-type electrode (160) on an upper surface of the semiconductor structure;
a passivation layer (162) on a side surface and the upper surface of the semiconductor structure, wherein the passivation layer on the upper surface of the semiconductor structure is arranged over the first-type electrode; and
a metal pad (164) on the second-type electrode, wherein the metal pad comprises at least one of Cr and Au.