发明名称 |
Gradient Ternary or Quaternary Multiple-Gate Transistor |
摘要 |
An integrated circuit structure includes a semiconductor substrate; insulation regions over the semiconductor substrate; and an epitaxy region over the semiconductor substrate and having at least a portion in a space between the insulation regions. The epitaxy region includes a III-V compound semiconductor material. The epitaxy region also includes a lower portion and an upper portion over the lower portion. The lower portion and the semiconductor substrate have a first lattice mismatch. The upper portion and the semiconductor substrate have a second lattice mismatch different from the first lattice mismatch.
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申请公布号 |
US2010301390(A1) |
申请公布日期 |
2010.12.02 |
申请号 |
US20090616068 |
申请日期 |
2009.11.10 |
申请人 |
KO CHIH-HSIN;WANN CLEMENT HSINGJEN |
发明人 |
KO CHIH-HSIN;WANN CLEMENT HSINGJEN |
分类号 |
H01L31/0304 |
主分类号 |
H01L31/0304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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