| 摘要 |
Improved Schottky diodes (20, 20′) with reduced leakage current and improved breakdown voltage are provided by building a JFET with its current path (50, 50′) of a first conductivity type serially located between a first terminal (80, 80′, 32, 32′) comprising a Schottky contact (33, 33′) and a second (82, 82′, 212, 212′) terminal. The current path (50, 50′) lies (i) between multiple substantially parallel finger regions (36, 36′) of a second, opposite, conductivity type substantially laterally outboard of the Schottky contact (33, 33′), and (ii) partly above a buried region (44, 44′) of the second conductivity type that underlies a portion (46, 46′) of the current path (50, 50′), which regions (36, 36′; 44, 44′) are electrically coupled to the first terminal (80, 80′, 32, 32′) and the Schottky contact (33, 33′) and which portion (46, 46′) is electrically coupled to the second terminal (82, 82′, 212, 212′). When reverse bias is applied to the first terminal (80, 80′, 32, 32′) and Schottky contact (33, 33′), the current path (50, 50′) is substantially pinched off in vertical or horizontal directions or both, thereby reducing the leakage current and improving the breakdown voltage of the device (20, 20′).
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