| 摘要 |
<p>A polycrystalline wafer inspection method has steps of: irradiating infrared light (3) toward an illumination position (P1) on a polycrystalline wafer (1) from a light source (2) arranged so that the optical axis passes by the illumination position (P1); photographing, by a camera (6) for photographing a photographing position (P2) on the polycrystalline wafer (1) separated a predetermined distance (D) from the illumination position (P1) in a surface direction of the polycrystalline wafer (1), the infrared light (3) being incident from the illumination position (P1), repeating reflection and refraction at crystal grain boundaries and defects inside the polycrystalline wafer (1), and exiting from the photographing position (P2); detecting defects in the polycrystalline wafer (1) from the brightness difference between a defect-free portion and a defect portion on a photographed image obtained by the camera (6). This inspection method makes it possible to obtain a photographed image including a light crystal pattern of the polycrystalline wafer (1) and therefore capable of clearly identifying the presence of defects and to easily and reliably detect the defects.</p> |
