| 摘要 |
<p>PURPOSE: A semiconductor device development apparatus and a developing method using the same are provided to prevent the impurity from remaining on a wafer by controlling the time of gas or rinse discharged from a plurality of nozzle in consideration of rotation of the wafer. CONSTITUTION: A chamber offers the space accepting a wafer(102). A plurality of nozzles(120) respectively discharges the discharged material. A spin chuck(100) rotates the wafer. A front side of the wafer is spread with the developer(104). The rinse(106) is discharged through a first nozzle located on the center of the wafer.</p> |
