| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser capable of balancing improvement of a COD value with suppression of increase of absorption loss. SOLUTION: A light-absorbing layer 30 is formed at a portion of a region located on at least either of a surface on a semiconductor 20 side out of a substrate 10 and a surface on the side opposite to the semiconductor layer 20, and facing at least a ridge part 15. The light-absorbing layer 30 is formed by implanting ions of an element capable of forming a deep level by breaking a crystal of the substrate 10, and has a function of absorbing light emitted from an active layer 12. COPYRIGHT: (C)2011,JPO&INPIT
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