| 摘要 |
A method of reducing the influence of the spread of the transmitted light on the feature size during optical lithography is disclosed. The method comprises at least two irradiation steps. During a first irradiation the resist is exposed with the original mask, i.e., comprising substantially the pattern to be obtained in the layer. Thereafter, without developing the exposed resist, an irradiation with at least one exposure is performed whereby the resist is exposed with a second mask, being at least partly the inverse of the original mask. The exposures of the second irradiation step are defocused compared to the first irradiation.
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