| 摘要 |
An insulating film (111) is formed on a semiconductor substrate (101) so as to cover the edge portion of an electrode pad (102) that is formed on the semiconductor substrate (101). A metal film (113) is formed on the electrode pad (102). A part of the surface of the insulating film (111) positioned on the edge portion of the electrode pad (102) has a roughened surface structure (111a). |
