| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem where irregularities in a film thickness occur where a silicon thin film becomes thin locally, when polishing the silicon thin film, after sandblasting the backside of an SOI substrate. SOLUTION: A method of manufacturing a surface-roughened substrate at least includes a cleaning process for performing cleaning to remove organic contaminants on one surface of an insulating substrate for manufacturing SOIs or a backside (a side that is not a silicon thin film) of the SOI substrate; a process for sandblasting the cleaned surface; and a process for polishing the other non-sandblasted surface. In the presence of the organic contaminants, the part is not sandblasted, and planarity is lost, and a wafer is warped, when the part is chucked for causing irregularities in polishing. By removing the organic contaminants, beforehand, the problem can be prevented. COPYRIGHT: (C)2011,JPO&INPIT
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